Site-Selective Doping of Compound Semiconductors by Ion Implantation of Radioactive Nuclei

Amorphization of elemental and compound semiconductors upon ion implantation

Cross-sectional TEM studies of ion implantation induced amorphization in a large number of semiconductors have been performed. Samples of Si, AlAs, GaAs, GaP, GaSb, InP, InAs, and ZnSe were simultaneously implanted at 77 K with 20 keV Si at doses between 1 x 10/cm and 1 x 10/cm. A dose of 1 x 10/cm minimized the ion beam induced epitaxial crystallization and sputtering effects. The depth of the...

Ion Implantation-Induced Layer Splitting of Semiconductors

Ionization‐enhanced diffusion: Ion implantation in semiconductors

Stoichiometry and doping in large gap compound semiconductors

2014 Current theoretical models on self-compensation in large gap semiconductors assume that intrinsic stoichiometric defects dominate and explain electrical properties quite satisfactorily without any contribution from impurities. Some recent results show on the contrary that impurities are in fact dominant at least at room temperature. The paper, starting from one particular material (ZnTe), ...

Facet-Selective Epitaxy of Compound Semiconductors on Faceted Silicon Nanowires.

Integration of compound semiconductors with silicon (Si) has been a long-standing goal for the semiconductor industry, as direct band gap compound semiconductors offer, for example, attractive photonic properties not possible with Si devices. However, mismatches in lattice constant, thermal expansion coefficient, and polarity between Si and compound semiconductors render growth of epitaxial het...